Semiconductor device e.g. fully depleted silicon-on-insulator FET, has electrically conductive gate adjoined to channel and placed in electrically conductive connection with gate contact area in contact position

摘要

The device has a mesa structure adjacent to a substrate boundary surface (14) on an electrical insulating layer. A mesa insulation area (22) that is adjacent to the surface is adjoined to the structure over a mesa boundary surface and includes a gate contact area. An electrically conductive gate is adjoined to a channel and stands in electrically conductive connection with the gate contact area in a contact position. The mesa structure and the mesa insulation area are completely enclosed in the direction parallel to the substrate boundary surface. The channel that is adjacent to the electrical insulating layer is formed in the mesa structure. The mesa insulation area is adjoined to an auxiliary structure (24) that is adjacent to the substrate boundary surface, over an auxiliary structure boundary surface. An independent claim is also included for a method of manufacturing a semiconductor device.