发明名称 COOLING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To improve the thermal reliability of a semiconductor device by equalizing the radiating amounts on the cathode and anode sides. CONSTITUTION:By making the surface area of a heat sink 4 on the cathode side larger than that of a heat sink 5 on the anode side, the thermal resistance between the cathode-side heat sink 4 and the atmosphere is decreased. Consequently, the cathode-side thermal resistance decreases, so that the cathode side has the radiating effect equal to that of the anode side. It is also effect that the contact surface between the cathode and the heat sink is formed into a curved surface in order to increase area and decrease thermal resistance.</p>
申请公布号 JPS56147455(A) 申请公布日期 1981.11.16
申请号 JP19800050491 申请日期 1980.04.18
申请人 HITACHI LTD;HITACHI HARAMACHI DENSHI KOGYO 发明人 TAKAHASHI EIJI;WAGA TAKASHI
分类号 H01L23/36;H01L23/367 主分类号 H01L23/36
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