| 摘要 |
PURPOSE:To obtain a compact thin-film capacitor by a method wherein on the SiO2 on a low-resistance Si substrate, the first metal electrode having a lattice constant close to that of BaTiO3 is provided so as not to contact with the substrate and coated with BaTiO3 having a smaller area, and the second metal electrode is provided thereon. CONSTITUTION:One surface of a low-resistance Si substrate 21 is coated with SiO2 26 for preventing eutectic, and the other surface with Pt 24. Cr 25a, Pt 25b and Au 25c are successively piled up on the film 26, and etching is performed twice with resist masks applied so that the first electrode 25 is patterned smaller than the eutectic-preventing film 26. Then, an insulating film 22 of a BaTiO3 series is provided thereon and patterned smaller than the electrode 25. A resist 27'' is selectively formed, and Cr 23a, Pt 23b and Au 23c are piled up thereon again to form the second electrode 23. The resist is removed to form the upper electrode 23, and an electrical connection between the lower electrode 25 and the Si substrate 21 can be obtained. By said constitution, a thin film capacitor which is compact and has a large capacitance can be obtained with a high yield. |
