| 摘要 |
<p>A semiconductor device and its manufacturing method are provided to improve the reliability and electrical properties of the semiconductor device itself by preventing the corrosion of a metal line using an improved arrangement of a diffusion barrier, an etch stop layer and an inter-metal dielectric. A diffusion barrier(120) is formed on a semiconductor substrate(110) with a conductive layer. An etch stop layer(130) is formed on the diffusion barrier. An inter-metal dielectric(175) including a via hole and a trench with a larger width than that of the via hole is formed on the etch stop layer. A metal line(190) is filled in the via hole and the trench. The via hole is connected with the conductive layer of the substrate through the diffusion barrier and the etch stop layer. The etch stop layer is made of SiOF.</p> |
