| 摘要 |
<p>An exposure mask and a method for forming the same are provided to increase a focus margin of a gate layer photo mask process of a DRAM(Dynamic RAM) by forming a semi-transparent material only on an isolation pattern region. An exposure mask having a dense pattern region and an isolation pattern region includes a quartz substrate(10), and a semi-transparent material layer(30). A line/space pattern is formed on the quartz substrate. The semi-transparent material layer is arranged on the quartz substrate at the isolation pattern region. The semi-transparent material layer has light transmittance between 5 and 95%. The semi-transparent material layer is formed by using an oxide material, which is doped with Cr, F, and Mo elements. The semi-transparent material layer is formed in multiple layers.</p> |
