Semiconductor power component e.g. bipolar transistor, for high-voltage application, has charge compensation regions with vertically stacked pn-junctions, where sum of breakdown voltages of junctions is smaller than voltage of drift zones

摘要

The component (1) has a semiconductor body (3) with a vertically endowed drift distance (4) between an electrode (5) on a top side of the component and another electrode (8) on a rear side of the component. The drift distance has vertically aligned drift zones (11) that are surrounded by vertically aligned charge compensation regions (12). The regions have vertically stacked pn-junctions (13) with heavily doped p and n regions, where the sum of breakdown voltages of the stacked pn-junctions is smaller than a breakdown voltage of the drift zones. An independent claim is also included for a method of manufacturing a semiconductor power component with a charge compensation structure.