发明名称 METHOD AND DEVICE FOR HEAT-TREATMENT OF SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To enable the uniform heat treatment continuously by a method wherein a holder on which the semiconductor substrate is mounted is inserted at one end of a core tube whose both ends are opened, and after the treatment being finished, the holder is carried out of the other end. CONSTITUTION:The core tube 10 is opened at the both ends, air curtains with inert gases being formed at the both ends, a gas conduit 11 being disposed in the tube, and quartz boats (the wafer holders) group 15 capable of being coupled with each other being coupled and moved by means of rubber belts 17, 18 which are driven by belt driving units 19, 20 turned at constant speed. Thereby, the continuous treatments are made possible, so that the productivity is improved, and each wafer is treated in the same manner, so that the fluctuation between the wafers is reduced.
申请公布号 JPS56146228(A) 申请公布日期 1981.11.13
申请号 JP19800050621 申请日期 1980.04.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAGAWA KEIICHI
分类号 H01L21/205;H01L21/00;H01L21/22;H01L21/677 主分类号 H01L21/205
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