发明名称 FORMATION OF THICK FILM
摘要 PURPOSE:To obtain the thick film substrate having uniform metalization and large adhesive intensity by a method wherein a Dumet plate covered with a copper oxide layer is put on a ceramic substrate and is heat-treated to melt and adhere the Dumet plate to the ceramic substrate. CONSTITUTION:The Dumet plate 4 is consisted of a core material of iron nickel alloy 1 covered with copper 2 and a layer 3 mainly consisted of copper oxide adhered thereon by the surface oxidation method. Thus obtained Dumet plate is put on one side face of the ceramic substrate 5, and is heat-treated to be molten and adhered and is connected. Then nickel plating is adhered on the surface of the Dumet plate adhered to the ceramic substrate to form the thick film. Accordingly the thick film ceramic substrate having uniform metalization and large adhesive intensity can be produced.
申请公布号 JPS56146258(A) 申请公布日期 1981.11.13
申请号 JP19800049842 申请日期 1980.04.16
申请人 NIPPON ELECTRIC CO 发明人 SAITOU MASATAKE
分类号 H01L23/12;H01L21/48 主分类号 H01L23/12
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