发明名称 INACTIVATING METHOD FOR SURFACE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To control an amount of an electrodeposition of glass and decrease glass cracks by a method wherein when glass corpuscles are electrodeposited on the semiconductor element surface by an electrophotoresist method, the electrodeposition is stopped when an electric potential of an electrodeposition liquid set up is detected. CONSTITUTION:A semiconductor element substrate 3 is dipped as an anode in the electrodeposition liquid and a platinum electrode 2 as a cathode, and are applied with a constant DC voltage to cause the glass corpuscles to electrodeposit the semiconductor element substrate 3 not covered with a silicon oxide film 4. The fact that the potential of the electrodeposition liquid and the amount of the electrodeposition of glass are corresponded to 1 to 1 has been found experimentally, so that a monitoring electrode 6 which monitors the amount of the electrodeposition is kept inserted in the electrodeposition liquid and the electrodeposition is stopped when the potential on an electrometer V reaches the value set in advance. Thereby, the amount of the glass can be controlled regardless of the amount of the glass in the electrodeposition liquid, and the glass cracks after the firing of the glass decrease.
申请公布号 JPS56146239(A) 申请公布日期 1981.11.13
申请号 JP19800049312 申请日期 1980.04.15
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 OOURA JIYUNICHI;KOBAYASHI TORAKICHI;SHINPO MASARU;TANZAWA KATSUJIROU;FURUKAWA KAZUYOSHI
分类号 H01L21/66;H01L21/316 主分类号 H01L21/66
代理机构 代理人
主权项
地址
您可能感兴趣的专利