| 摘要 |
Si solar cell has an active zone in which charge carriers are produced by penetrating solar energy and a glass or plastics collector plate contg. fluorescent centres (I), acting as concentrator system for the incident sunlight. (I) consists of Nd ions surrounded by Cr ions. The Cr doping is approx. 10 atom-% and the Nd doping 2-5 atom-%. The collector plate is under 0.1cm. thick and has mirror finish surfaces and edges. The semiconductor body has a pn-junction ca. 20-30 microns below the surface of the Si semiconductor. Current generation is cheaper than usual and problems of ageing of the collector plate are eliminated. |
