发明名称 MANUFACTURE OF ROCK CRYSTAL AND SILICON ELEMENT
摘要 PURPOSE:To form the element in a prescribed shape by a simple process by a method wherein a metallic pattern is formed on an insulated substrate capable of being applied an anisotropic etching, and the insulated substrate is etched with the metallic pattern as a mask. CONSTITUTION:There is shown an example in which a coil is formed on the insulated substrate and at the same time, the element is shaped in a prescribed shape. A Cr layer 21 and An layer 22 are attached in sequence on the insulated substrate 1 of a crystal plate and Si substrate etc. which can be applied the anisotropic etching, and further, a resist layer 3 is coated on the layers 21, 22. Then, an electrode, coil patterns 51, 52, 53 and frames 61, 62 to be formed on the insulated substrate 1 are formed by a photoetching. At this time, by suitably selecting intervals l1, l2 between the individual patterns, the insulated substrate 1 can be separated at a part of the large interval l1 in the anisotropic etching process successively applied. Thus, the element spontaneously shaped can be obtained in a simple process.
申请公布号 JPS56146237(A) 申请公布日期 1981.11.13
申请号 JP19800048942 申请日期 1980.04.14
申请人 YOKOGAWA ELECTRIC WORKS LTD 发明人 UEDA TOSHITSUGU;KOUSAKA FUSAO
分类号 H01L21/306;(IPC1-7):01L21/306 主分类号 H01L21/306
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