| 摘要 |
PURPOSE:To improve the triode characteristics of the subjet transistor by a method wherein the ratio of the effective channel length between a source and a drain, and a gate oxidation film thickness is brought down to a small one, and in addition, a high impurity density bruried layer and a low impurity density buried layer are provided. CONSTITUTION:The impurity density of the substrate 1 and the channel region 9 is maintained below 4X10<15>/cm<2>. The depth from the surface of the channel region 9 of the high impurity buried layer 8 is maintained below 0.4mum. The film thickness Tox of the gate insulating film 2 is selected at 1,000-3,000Angstrom and the ratio Leff/ Tox of the film thickness Tox and an effective channel length Leff is brought down to 10 or below. On the interface of the channel region 9 and the gate insulating film 2, the impurity density layer 10 having the same conductive type as the channel region 9, the thickness of 1mum or below and the impurity density of 1X10<16>-5X 10<16>/cm<2>, is provided. |
