| 摘要 |
PURPOSE:To obtain excellent triode charactristics by a method wherein the impurity density of a substrate and a channel region, and the depth and the like of the channel region of the high impuirty density buried layer for the subject transistor are established appropriately. CONSTITUTION:The impurity density of the substrate 1 and the channel region 9 is maintained below 4X10<15>/cm<2>. The depth from the surface of the channel region 9 on the high impurity density buried layer 8 is maintained below 0.4mum. Also, the film thickness Tox of a gate insulating film 2 is selected at 1,000-3,000Angstrom and the retio Leff/Tox of the film thickness Tox and an effective channel length Leff is brought down below 10. |
