| 摘要 |
<p>PURPOSE:To obtain a pattern of high accuracy by irradiating a photoresist with light for detecting the thickness and correcting the extent of exposure according to the state of the reflected light when reticle patterns are contracted and arranged on a hard plate with the photoresist applied and the photoresist is exposed. CONSTITUTION:In the manufacture of a photomask for manufacturing an integrated circuit of a semiconductor or other process photoresist film 8 coated onto the surface of hard plate 7 held by plate holder 6 on XY stage 5 is irradiated with light from light source 1 after arranging the reticle patterns of pattern holding part 2 on plate 7 by means of contracting lens 4 of step and repeat camera 3. At this time, film 8 is irradiated with light from light source 9 for measuring the thickness, and the reflected is received by photodetector 10. A change in the surface reflectance of plate 7 due to a change in the thickness of film 8 is indicated by the output voltage or electric current of detector 10, which is then amplified and compared to a predetermined standard thickness with a differential amplifier to control the shutter. Thus, the extent of exposure is controlled to prevent a pattern change due to a change in the thickness of film 8, and a mask of high accuracy is obtd.</p> |
