| 摘要 |
<p>PURPOSE:To obtain a mask with superior uniformity and high accuracy in a high yield by covering a thin metallic film on a mask substrate with a highly hydrophobic resist pattern as a mask and spraying an etching soln. on central and peripheral parts of the substrate while rotating the substrate. CONSTITUTION:A pattern of a highly hydrophobic resist such as methacrylate polymer is drawn with electron beams on mask substrate 15 obtd. by forming a Cr- Cr2O3 film or the like on a transparent glass substrate by vapor deposition, and the pattern is developed. The resulting resist pattern is used as a mask. Etching sonl. 17 is then sprayed from nozzles 18, 19 set over central and peripheral parts of substrate 15 to each the film while holding substrate 15 by suction with vacuum chuck 16 and rotating substrate 15. In a case where soln. 17 is sprayed from nozzle 18 alone ununiform etching is caused in a peripheral part of the film since hydrophobic resist repels soln. 17. By this method ununiform etching is prevented, and a mask of high accuracy is obtd. in a high yield.</p> |
