SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve the withstanding surge voltage on the signal input side of the subject semiconductor device making use of the input protective resistor having a small resistance value by a method wherein two or more of contact holes are formed on the input side of the input protective resistor. CONSTITUTION:In the semiconductor device 18, an input terminal 17 and an input protective resistor 14 are connected by a conductive wiring 16 through the intermediary of two or more of contact holes 15 which have been formed on the input side of the input protective resistor 14. The surge inputted from the input terminal 17 and the heat generated by the surge can be dissipated effectively into a semiconductor substrate 11 through the intermediary of the input protective resistor 14. As a result, the resistance value of the input protective resistor 14 is reduced and the withstanding surge voltage on the signal input side can also be improved.