| 摘要 |
PURPOSE:To firmly join a chalcogenide compd. target for sputtering to a backing plate at a low temp. by vapor-depositing Zn or Sn on the surface of the target to be joined before joining. CONSTITUTION:When a target 1 for sputtering made of a chalcogenide compd. as a compd. of a chalcogen such as Se, Te, Sb or As is joined to a backing plate 6 with an insert material 5 such as In or solder in-between, a vapor- deposited Zn or Sn layer 3 is formed on the surface of the target 1 to be joined and a counter diffusion layer 2 consisting of part of the target 1 and Zn or Sn is further formed. The insert material 5 is then put on the backing plate 6 and the layer 3 on the target 1 is superposed on the material 5 and heated. The material 5 adheres to the plate 6 and a eutectic compd. 4 is formed between the material 5 and the layer 3 at a low temp., so the target 1 can be joined to the backing plate 6 with superior bonding strength. |
