| 摘要 |
<p>Prodn. involves making a slip from Si powder with a particle size of under 1 micron and a binder, spreading the slip on a substrate and drying the sheet formed, then removing the substrate and sintering the sheet below 1400 deg.C on an inert, refractory substrate in a protective gas atmos., until a layer of monocrystalline granules of dia. corresp. to the thickness of the sheet is obtd., as in 2927086. The novel feature is that the sintering substrate is a sheet of high-melting metal, which is resistant to Si, pref. a sheet of W or Ta. The substrate can be used many times, since there is no change in form or reaction with Si, and the sintered material is not contaminated by diffusion of material from the substrate.</p> |
