| 摘要 |
<p>An apparatus for implanting ions into the wafer (22) in the manufacture of a semiconductor device, especially an apparatus suitable for implanting double-charge ions into the wafer (22). Only those ions having predetermined masses are chosen by the mass-separation electromagnet (14) from among ion beams (12) originating from the ion source (10) and implanted into the wafer (22) through the slit (16). Between the slit (16) and the mass-separation electromagnet (14) are provided electrodes (24) for separating ions having different energy levels disposed with the direction of deflection parallel to that of the mass-separation electromagnet, and a deflective magnetic field (26) for separating neutral particles and so on disposed with the direction of deflection perpendicular to that of the mass-separation electromagnet. </p> |
