| 摘要 |
A method of forming a copper wiring in a semiconductor integrated circuit device is provided to simplify the process by suing a tungsten layer as a seed layer. A base layer(20) is formed on a substrate, and then an interlayer dielectric(22) is formed to cover the base layer. The interlayer dielectric is selectively etched to form a trench(24) and a hall(26). Primary and secondary copper diffusion barrier layers are formed on the interlayer dielectric and the base exposed through the hall. The step of forming the copper diffusion barrier layers includes repeating a first cycle of forming a tungsten layer and a second cycle of forming a tungsten nitride layer, in which the step of repeating the first and second cycles is performed in the same chamber.
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