| 摘要 |
A wiring method of a semiconductor device is provided to prevent breakage of an anti-reflective layer by subjecting an insulating layer to an annealing process of low temperature. A metal barrier layer(202) is formed on a semiconductor substrate(201), and then a metal layer(203) is formed on the metal barrier layer. An anti-reflective layer(204) is formed on the metal layer. The metal barrier layer, the metal layer and the anti-reflective layer are patterned to form plural metal wiring patterns. A first insulating layer is formed on the metal wiring patterns using FSG(Fluorinated Silicate Glass), and then a second insulating layer is formed by using any one of P-SiH4 and P-TEOS. The substrate is annealed.
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