| 摘要 |
PURPOSE:To contrive the improvement of the life time of a minority carrier and the leakage current characteristics of a P-N junction by forming a semiconductor film gradually changing from amorphous into crystalline on an insulating substrate. CONSTITUTION:A laser beam 5 is focused at a point on the film surface 3 of an amorphous film 2 formed on an insulating substrate 1 through a slit 6 and a focusing lens 8 and the focus 4 of the beam 5 is scanned on the whole surface of the film surface 3 by moving the substrate 1 as shown in arrows. Next, the inside surface is scanned by the focus 4 by the focus depth of the lens 8 by moving the focus depth of the lens 8 downward and by narrowing the gap of the slit 6. In the above operation, the film 2 changes from the film 3 into a semiconductor film gradually changing from poly crystalline into amorphous toward the direction proceeding to the substrate 1. In this formation, lots of stress such as temperature stress or the like are appreciably mitigated comparing with crystalline substance. Therefore, a crystalline section can expect good crystallization and a deterioration in the characteristics of the element formed in the crystalline section can be prevented. |
