Change transfer device with PN Junction gates

摘要

A plurality of static induction transistors capable of establishing a controllable potential barrier for charge carriers in the channel region between the source and the drain under the influence of the potentials of the gate and the drain connected in series and integrated in a semiconductor chip to constitute a charge transfer train. The drain of one static induction transistor and the source of the next adjacent static induction transistor are integrated in common into a charge storage region. An insulated electrode is provided on each charge storage region to control the potential thereof. The charge transfer train can be driven by 4-phase, 3-phase or 2-phase signals. The gate electrodes and the drain electrode for each transistor may be integrated to form directional 2-phase charge transfer train. Image pick up device of very high operation speed can be materialized with the above charge transfer train.