| 摘要 |
PURPOSE:To obtain an electrode suitable for bonding by laminating on the main body surface of a compound semiconductor element, an Au alloy film which is brought into ohmic contact therewith, a barrier metal layer and an Al film. CONSTITUTION:On an N type GaP11, an N layer 12 is laminated by adding Te and thereon, a P layer 13 is laminated by adding Zn and O to form a main body 14. An AuZu alloy 16 is formed on the layer 13, and an AuGe alloy 15 on the layer 11. Then, on the alloy film 16, Ta17 and Al18 are piled to form an electrode pattern 19, and this is treated in Ar at 520 deg.C for approximately five minutes in order to bring the Au alloy films 16 and 15 into ohmic contact with the main body 14. Then, the alloy film 15 is secured to a lead frame 22 by using a conductive resin 21, and an Au wire 20 is bonded to the Al film 18. Then, this is properly sealed with resin. In the electrode 19 formed by said constitution, the barrier metal layer 17 restrains the diffusion into the Au alloy 16 and moreover, the Al18 restrains the Zn and Ga having diffused into the layer 17, so that the deterioration of the bonding efficiency is prevented. W, Ti, Mo, Ni and alloys thereof are effective for the layer 17, besides Ta. |
