| 摘要 |
A semiconductor laser is disclosed wherein the active region has been doped with deep-level electron traps either by proton bombarding the active region or by doping with an impurity, such as oxygen, iron, or chromium. The density of traps is such that an optical absorption parameter of greater than 30 cm-1 is achieved. This laser, when combined with an ordinary photodiode, exhibits overall optical gain thereby permitting an array of optical logic circuits.
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