| 摘要 |
PURPOSE:To prevent short-circuiting between electrodes by a method wherein after an Al surface layer which might produce hillocks has been slightly etched to completely remove the portions which become nuclei, then the second layer electrode is provided through an interlayer insulating film. CONSTITUTION:After the first layer Al 4 has been formed, the surface thereof is etched by approximately 1/3. Then, the Al is photoetched to form a wiring pattern, which is coated with an interlayer insulating film 5 and selectively opened to form the second layer Al 6. By said constitution, defective portions which might become the nuclei of hillocks are removed by the etching of the first layer Al, and the production of hillocks can be completely prevented also in the subsequent heat treatment. Accordingly, no short-circuiting occurs between the layers. A completely similar effect can be obtained if the first layer is an Al alloy such as Al-Si. |
