| 摘要 |
PURPOSE:To form a Schottky barrier diode (SBD) and a transistor with simple steps by simultaneously forming emitter electrode window, base electrode window and SBD electrode window at an SiO2 mask, and then employing a photomask and ion implantation. CONSTITUTION:A P type base layer 2 is formed in a collector layer 1 made of N type Si epitaxial layer. Then, an SiO2 film 3 is formed, and a Schottky barrier diode (SBD) window 4, an emitter electrode window 5, and a base electrode window 6 are formed by photoetching. Thereafter, a mask is formed of a resist layer 7, and a nondoped polysilicon layer 8 is formed at low temperature. Subsequently, with the second photoresist layer 7' as a mask N type impurity is ion injected to form an emitter 10. Then, the photoresist layer is removed, a metallic layer is covered thereon, patterned, and an SBD and the respective electrodes are formed. |
