| 摘要 |
PURPOSE:To suppress the leakage current of a semiconductor light emitting device by forming a semiconductor layer surrounding the active region of specific first to third growing layers. CONSTITUTION:An N type InP 2 of 5mum, nondoped InGaAsP active layer 3 of 0.1-0.2mum, P type clad layer of 1.5-2.0mum, or P type InGaAsP contact layer 5 of 1mum are formed on a (100) plane N type InP substrate 1, and reversely mesa etched. Thereafter, the same conductivity type semiconductor layer 9 as the grown substrate is grown as the semiconductor layer in which mesa stripe is buried, and further reverse conductivity type semiconductor layer 10 and equal conductivity type semiconductor layer 11 to the layer 9 are laminated thereon. the same conductivity type different semiconductor layer 12 thereto is grown on the surface layer. |
