| 摘要 |
PURPOSE:To enable plating in case of the reverse direction to a diode by a method wherein inverse conduction type diffusion layers are formed on both the surface and the back of a (-) conduction type semiconductor substrate, electrons are injected to the substrate from the diffusion layer on the backside and a plated electrode is made up on a metallic electrode. CONSTITUTION:An n type diffusion layer 34 is made up on the backside of a p type semiconductor substrate 31 with an n type diffusion layer 33, an electrode 38, etc. are built up, undesirable sections are coated with a photo-resist film 39, field plating is conducted so that currents flow through the electrode 38 through the substrate 31 and the diffusion layer 34 from an upper surface electrode, a silver plated electrode is formed on the upper surface electrode, the substrate is divided and a section where is a p type diffusion layer 36 is formed is used as an element. Thus, leakage currents in the reverse direction are increased by adjusting plating voltage so that electrons are injected from the n type layer 34, and silver plating is obtd. |
