| 摘要 |
PURPOSE:To form a transistor having small junction capacity of a base and collector junction by forming a buried insulating layer in the transistor. CONSTITUTION:After an N<+> type buried layer 13 and an N type epitaxial growth layer 14 are formed on a P type silicon substrate 12, an SiO2 layer 15 is formed thereon by a selective oxidation method, and insulator regions 14, 14' are formed. Then, a thin layer 17 made of silicon having N type impurity is formed thereon, annealed by irradiating a laser beam or an electron beam thereon to convert the thin layer into a silicon crystal layer 17. After an oxide film 18 is formed by a selective oxidation method, a base region 3 is formed by introducing P type impurity, and an emitter region 4 and a collector electrode region 20 are formed by introducing N type impurity. Thus, the base and collector junction 5 can be localized only to the part directly under the emitter region 4 so as to reduce the junction capacity. |
