| 摘要 |
PURPOSE:To improve the integration of a semiconductor device by forming a source and a drain regions in a semiconductor layer formed on a semiconductor substrate, and forming a gate insulating film and a polycrystalline silicon film between the regions. CONSTITUTION:A P type impurity region 30 is formed partly on an N type impurity substrat 21, a P type low density silicon monocrystalline layer 31 is formed on the region 30, and an N type low density silicon monocrystalline layer 23 is formed in the vicinity of the layer 31. N type source and drain regions 32, 33 are formed on the layer 31, and P type source and drain regions 26, 27 are formed on the layer 23, passivation film 28 and electrode 29 are formed thereon, and the region 27 is electrically connected to the region 32. A gate oxide film 24 and a polycrystalline layer 25 are formed between the drain region 27 and the source region 32. |
