| 摘要 |
The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400 DEG C. to 525 DEG C. range. The original breakdown voltage is recovered by annealing the devices at a temperature of above about 550 DEG C. prior to metallization and alloying the metal at less than 425 DEG C. |
