发明名称 DRIVING DEVICE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To enable to miniaturize an insulating transformer of the driving device of the semiconductor element and to constitute the insulating transformer by print patterning when a switching element is to be driven by a method wherein a control signal is modulated with a high frequency. CONSTITUTION:A DC power source is fed to the collector of a transistor 71 through the primary winding of the insulating transformer 76. The emitter of the transistor 71 is earthed, the control signal is applied from a control signal generation circuit 9 to the base thereof through a resistor 75, and moreover the base is connected to a high frequency oscillation circuit 8 through a diode 72. When the control signal is applied, the base current of the transistor 71 is modulated by the high frequency oscillation circuit 8 through the diode 72. The insulating transformer 76 is excited by the high frequency, and electric power is transmitted to the secondary side.
申请公布号 JPS56141770(A) 申请公布日期 1981.11.05
申请号 JP19800041229 申请日期 1980.04.01
申请人 HITACHI LTD 发明人 ITOU SHIYOUICHI;SUNADA MASAYOSHI;NAKAMURA KENJI
分类号 H02M1/08;(IPC1-7):02M1/08 主分类号 H02M1/08
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