发明名称 METHOD FOR GIVING STRAIN TO SEMICONDUCTOR WAFER
摘要 PURPOSE:To enable back side strain to be given uniformly to a great deal of wafers by abrasing the back surface of semiconductor wafers using abrasing particles and abrasing cloth in a simple manner. CONSTITUTION:The abrasing cloth 4 is adhered to a surface plate 5 to form one body. A plurality of the wafers 3 are fixed to the wafer fixing surface plate 1 via a bonding agent which is supplied on the top of the wafers. When the surface plate 5 is rotated in the direction of an arrow, the surface plate 1 is rotated in the direction of an arrow. The wafers 3 are abraised by the abrasing cloth 4. In this way, in order to prevent the rise in temperatures and to control the magnitude of strain, abrasing liquid 6 wherein abrasing particles are resolved is supplied, and a great deal of strain can be uniformly given to the back sides of the wafers 3.
申请公布号 JPS56140632(A) 申请公布日期 1981.11.04
申请号 JP19800042614 申请日期 1980.04.01
申请人 NIPPON ELECTRIC CO 发明人 HAMAGUCHI TSUNEO
分类号 H01L21/322;(IPC1-7):01L21/322 主分类号 H01L21/322
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