| 发明名称 |
A capless annealing method for ion-implanted III-V compounds. |
| 摘要 |
<p>Thermal decomposition is reduced and stoichiometry retained during annealing of a multiple element intermetallic semiconductor material by heating it in an environment with an excess of the most volatile constituent, in particular, when annealing a Si implanted GaAs wafer (58) while in proximity to InAs (50).</p> |
| 申请公布号 |
EP0038915(A1) |
申请公布日期 |
1981.11.04 |
| 申请号 |
EP19810101363 |
申请日期 |
1981.02.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RUPPRECHT, HANS STEPHAN;WOODALL, JERRY MCPHERSON |
| 分类号 |
H01L21/265;H01L21/324;(IPC1-7):01L21/324 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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