| 摘要 |
PURPOSE:To eliminate a withstand fault by a method wherein a region located inwardly to a some extent from an end edge of an SiO2 mask pattern is covered with acid-proof wax and applied a mesa etching. CONSTITUTION:The SiO2 5 at the part where the mesa is formed by a phototyping technic is removed and a window 16 is opened. The acid-proof wax 8 is printed on the SiO2 at about 100mu inside the end edge and chemically etched. After the wax 8 is melted, the Si surface is lightly etched and attached with glass 10 by an electrophoresis method and burning-fused. Then, an electrode 11 is formed and separated into an individual. With this construction, since a pin hole is removed, the glass is not attached to the pin hole and cracks are decreased during the process. In addition, since the glass is not attached to the electrode surface during the supersonic junction of an A wire, the Si substrate is prevented from scooped cracks. |
