发明名称 |
Process for producing a patterned resist image. |
摘要 |
<p>The invention relates to a process for producing a patterned resist image in a layer of a phenol-formaldehyde/diazoketone resist material.
<??>The exposed patterns in the resist layer are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure. </p> |
申请公布号 |
EP0038967(A1) |
申请公布日期 |
1981.11.04 |
申请号 |
EP19810102643 |
申请日期 |
1981.04.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KAPLAN, LEON H.;ZIMMERMAN, STEVEN MICHAEL |
分类号 |
G03F7/022;G03F7/20;G03F7/26;G03F7/30;G03F7/36;H01L21/027;(IPC1-7):03F7/08 |
主分类号 |
G03F7/022 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|