发明名称 Process for producing a patterned resist image.
摘要 <p>The invention relates to a process for producing a patterned resist image in a layer of a phenol-formaldehyde/diazoketone resist material. &lt;??&gt;The exposed patterns in the resist layer are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure. </p>
申请公布号 EP0038967(A1) 申请公布日期 1981.11.04
申请号 EP19810102643 申请日期 1981.04.08
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 KAPLAN, LEON H.;ZIMMERMAN, STEVEN MICHAEL
分类号 G03F7/022;G03F7/20;G03F7/26;G03F7/30;G03F7/36;H01L21/027;(IPC1-7):03F7/08 主分类号 G03F7/022
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