| 摘要 |
PURPOSE:To increase the reliability of a horizontal-type transistor by a method wherein a P type emitter is formed in a P<+>-layer formed in an N type base layer. CONSTITUTION:SiO2 12 on the N type base 1 is made a mask, being selectively injected with P-ions and heat-treated to form an N<+>-layer 11 by utilizing the resist mask. Then, B-ions are injected, the treatment being applied at temperatures lower than that at the formation of the layer 11, the P<+>-emitter 2 being formed in the layer 11, and a P<+>-collector 3 being formed in the base 1. Thereafter, SiO2 4, PSG 5 are formed and attached with electrordes 9, 10. With this construction, an inversion layer is not grown on the N<+>-layer 11 during the actuation at high temperatures, so that the inversion layer is cut on the base surface between the emitter and collector, the channel being not formed and a leak not arising. Since the N<+>-layer is not contacted with the collector, the collector withstand is not decreased. Further, the N<+>-layer is so thin that the area occupied is not increased. |
