| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that operates on a novel operating principle possible to greatly reduce on-state resistance. SOLUTION: The semiconductor device 1 includes: a p<SP>+</SP>-type silicon substrate 2; an n-type semiconductor layer 3 that is arranged on the silicon substrate 2 and has a plurality of trenches 3a and wherein each of areas among adjoining trenches 3a becomes a channel 10; and a plurality of embedded electrodes 5 that are arranged on the inner surfaces of the trenches 3a in the semiconductor layer 3 with an insulation film 4 interposed. A PN diode comprises the silicon substrate 2 and the semiconductor layer 3. If the embedded electrode 5 is negative in potential, a depleted layer 11 is formed over the adjoining two trenches 3a and the channel 10 is turned off. If the embedded electrode 5 is positive in potential, no depleted layer 11 is formed in all areas among the adjoining trenches 3a and the channel 10 is turned on. COPYRIGHT: (C)2009,JPO&INPIT
|
