| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor substrate capable of reducing, in particular, density of basal plane dislocation (BPD) in a SiC crystal substrate, and of flattening unevenness on a surface of the substrate associated with the reduction. SOLUTION: In this manufacturing method of a silicon carbide substrate, when forming an epitaxial growth layer on a silicon carbide substrate 1 having an off-angle of 1-8°, parallel line-like unevenness having an aspect ratio not smaller than a tan off-angle of the silicon carbide substrate is formed before the epitaxial growth, and thereafter the epitaxial growth layer is formed. In the manufacturing method of a silicon carbide substrate, the height of the unevenness is 0.25-5μm. COPYRIGHT: (C)2009,JPO&INPIT
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