发明名称 COATING LIQUID FOR GATE INSULATING FILM, GATE INSULATING FILM AND ORGANIC TRANSISTOR
摘要 <p>Disclosed is a coating liquid for gate insulating films which can be fired at a low temperature not more than 180°C. Also disclosed is a gate insulating film which can be easily formed by coating and has excellent solvent resistance and good characteristics such as resistivity and semiconductor mobility when an entire device is produced only by coating. Further disclosed is an organic transistor using such a gate insulating film. Specifically disclosed is a coating liquid for gate insulating films which is characterized by containing a polyimide obtained by dehydration ring closing of a polyamide acid having a repeating unit of a specific structure. Also specifically disclosed are a gate insulating film using the coating liquid and an organic transistor using such a gate insulating film.</p>
申请公布号 KR20090010164(A) 申请公布日期 2009.01.29
申请号 KR20087024419 申请日期 2007.05.23
申请人 NISSAN CHEMICAL INDUSTRIES, LTD. 发明人 MAEDA SHINICHI;IINUMA YOSUKE
分类号 C09D179/08;H01L21/336;H01L29/786;H01L51/05 主分类号 C09D179/08
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