| 摘要 |
PURPOSE:To facilitate side etch quantity of a pattern transferred in a process for manufacturing LSI, etc. to be measured, by adding a triangular or a diamond pattern having 2 sides with a specified vertical angle on a proper position of a mask for exposure of the pattern. CONSTITUTION:A triagnular pattern having 2 sides of <=30 deg. vertical angle theta and distance (l) from the vertex to the base is formed on a proper position of an exposure mask together with the exposure pattern. When the patterns are formed on the substrate of a semiconductor using this mask, and the transferred patterns change by width 8 resultig from dimensional variation in forming the photoresist pattern and that in etching the SiO2 film using the photoresist as a mask, distance (m) between the vertex of the triangular pattern and that of the mask pattern applies to the following equation: delta=msintheta, thus permitting minute distance delta hardly measurable by naked eyes to be easily measured by measuring the enlarged (m) value and obtaining it by calculation. In the case of a parallelogram, (m) beomes l-l', thus enabling high precision fabrication. |
