| 摘要 |
PURPOSE:To obtain a long sized photoelectric converter having no defect by forming an array photoelectric converting element, storage means, cross-talk preventing diode and signal processor formed of transistor on the same substrate. CONSTITUTION:N pieces of photoelectric coverting element 501 laterally aligned, N pieces of storage capacitors 502, N pieces of crosstalk preventing diodes in a thin film transistor 503, wiring unit 505 of the photoelectric coverting element side 505 and wiring unit 506 of transistor side are formed on the long sized substrate 504, and a photoelectric converter is thus formed. The output of the elements 501 is stored in the storage capacitors 502, and then read out through the thin film transistor 503. The crosstalk at this time can be prevented by the diodes. |
