| 摘要 |
The process makes it possible to produce a nonlinear voltage-dependent resistor from a starting component containing zinc oxide as main constituent by forming a highly insulating side-wall layer on the component. The starting component (18) is introduced into a sintering vessel (12, 22) and heated to sintering temperature (1000 to 1400 DEG C). A layer (20) which is located on the side wall of the sintering vessel and contains at least antimony oxide and optionally also bismuth oxide and silicon oxide produces an atmosphere during the sintering process which is composed of the oxides mentioned. The highly insulating side-wall layer for the component (18) is formed in a gas/solid phase reaction of the atmosphere in the sintering vessel with the material of the starting component. <IMAGE> |
