| 摘要 |
PURPOSE:To make the thermal effect of a heating element work on each element uniformly by providing a heat harnessing zone in either of intercircuit element spaces distributed under electric insulation on the same semiconductor substrate. CONSTITUTION:A transistor 1 on a silicon substrate 0 is a heating source and transistors 2, 3 requiring pairing properties have a heat harnessing zone 4 as if to shield the side of an element 1. This heat harnessing zone is provided on a silicon dioxide 5 and materials of higher function than the former. If wiring for the element is of polysilicon, the said zone shall be separately evaporated with aluminium and if the said wiring is of aluminium, the zone shall be separately added with copper film. In addition, if the zone is of the same material as element wiring, the width and thickness of the zone shall be increased. As a result, the entire temperature is uniform and the elements 2, 3 making a pair have a uniform temperature, thus compensating for a disavantage of arrangement conditions. The heat harnessing zone can be a groove which reduces heat conductivity, change temperature conditions and making the temperature uniform. |
