| 摘要 |
<p>PURPOSE:To obtain a micro linear width pattern by exposing and developing the second and third regist patterns whose width is larger than the space of the first pattern, on the first pattern of line and space under a varying exposure condition, and processing the space of the first pattern. CONSTITUTION:An electronic beam 4 is exposed on a substrate 1 to create the first pattern 10 of a regist 3. Another regist 11 is applied and the second pattern is subjected to exposure at a large exposure value 31 and the third pattern at a small exposure value 32 and then they are developed. Thus the second pattern including a space 14 and the third pattern including a space 15 are sequentially formed. Following this procedure, concave parts 16, 17 are created by etching the substrate 1 with the assistance of the resists 3 and 11 as a mask, and then the resists 3, 11 are removed. The pattern thus obtained is formed into a region by means of the logic product of the spaces 14, 15. The groove widths of the concave parts 16, 17 are the same. The positioning of simple line and space and complicated pattern has only to be made only once, thus allowing high-yield patterning.</p> |
