| 摘要 |
<p>PURPOSE:To dispense with a large-size heater and a control device by forming a semiconductor film through the attachment of a molten semiconductor particles on the surface of a substrate. CONSTITUTION:A SiO2 substrate 1 having a matrix-type unevenness is supported on a plate O and is kept at room temperature. Molten silicon particles 2 are injected from an irradiation gun 3 and applied as a coat. If the silicon particles 2 are attached on the surface of the substrate, the particles 2 are gradually cooled to form a monocrystal film. To the film thus obtained 4, impurities are added. Under this method, the silicon particles are gradually cooled in the same manner as a laser annealing process, so that the silicon particles are easily processd in large quantities and heater or a control device are dispensed with. Furthermore, a semiconductor film can be obtained for a substrate of large size.</p> |
