| 摘要 |
PURPOSE:To enable lengthening of the element and reduce leak current by constituting the same by using a photoelectric transducing layer consisting of two layers of films of II-VI group compound having different band gaps and an amorphous Si film. CONSTITUTION:A transparent electroconductive film 2 is formed through evaporation on a substrate 1 of phototransmissible material and thereon the photoelectric transducing layer is laminated. The photoelectric transducing layer 2 is constituted by laminating the film 3 of II-VI group compound having a relatively large band gap and the film 4 of II-VI group compound having a smaller band gap than the above in this order. Next, the amorphous Si film 5 is laminated on the photoelectric transducing film, and then an electrode couple 6 is formed on the film 5. The film 5 may be formed also between the film 2 and the film 3. By constituting the photoelectric transducing element in this way, the manufacturing processes therefor are facilitated and the lengthening thereof is made possible, while excellent photoelectric current characteristic with little leak current is obtained. |
