| 摘要 |
PURPOSE:To provide high-density CMOSIC by preparing a reciprocal compensating- type FET in an epitaxial layer region of an inverse electroconductive type and a substrate and applying a power supply voltage to the substrate so that a surfacial power supply wiring may be eliminated. CONSTITUTION:For instance, P type epitaxial layer 101 is built up on N type substrate 100 to provide N type well 102. Then ''P'' channel-type FET and N channel-type FET are provided in N type well 102 region and ''P'' type epitaxial layer 101 region respectively to constitute a CMOS structure. Under this structure, if for instance, an inverter circuit is constituted, it is necessary to earth a source 106 and connect gates 109, 110 to an input 112, drains 103, 105 to an output 111 and N type substrate 100 to a power supply 113 respectively. In this circuit, it is so structurally designed that NPN transistor consisting of a substrate, an epitaxial layer and a well may be switched on at a power supply voltage. Consequently, a voltage is generated even without the connection of a power supply 113 to the N type well 102. Thus it is possible to dispense with a power supply wiring and therefore, provide a high-density integration with no necessity to increase manhours. |
