| 摘要 |
PURPOSE:To form a high-precision and microetched pattern by performing reactive ion etching and plasma etching continuously on the same device equipped with a parallel flat plate electrode. CONSTITUTION:Flat plate-shaped electrode 4 and electrode 5 are provided in parallel inside a chamber 1. One electrode, for instance, the electrode 5 is equipped with a through hole 8, in which a setting member 7 for an object to be etched 26 is installed. First, the electroconductive setting plane 10 of the setting member 7 is set in the through hole 8 in such manner that the said plane is on the same level as the electrode 5. Then a reactive etching is carried out to such extent that the exposed surface of a coat where a resist pattern is provided, partially remains in a film thickness direction. Following this procedure, an electroconductive auxiliary plate 11 connected and fixed to the setting plane 10 by means of an insulative barlike element 9, is set in the through hole 8 and the remaining coat is plasma-etched by arranging the setting plane 10 between electrodes in such manner that it is insulated. Under this constitution, it is possible to minimize undercuts or injuries on the base and thus form a microetched pattern with high precision. |
